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GexSi1−x Waveguides Grown by Rapid Thermal Processing Chemical Vator Deposition
Published online by Cambridge University Press: 22 February 2011
Abstract
We report the growth and characterization of GexSi1−x films for optical waveguiding. GexSi1−x/Si waveguides were grown by rapid thermal processing chemical vapor deposition. An average attenuation of 3.3 dB/cm was achieved for a 1 μm thick Ge0.04Si0.96 layer patterned into rib waveguides 2000 Å deep with widths of 5 μm. Directional couplers were also fabricated. Average coupling efficiencies of 85% were achieved for 1.5 μm interwaveguide separation.
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- Copyright © Materials Research Society 1991
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