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Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology

Published online by Cambridge University Press:  17 March 2011

F. Letertre
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
C. Deguet
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
C. Richtarch
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
B. Faure
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
JM Hartmann
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
F. Chieu
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
A. Beaumont
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
J. Dechamp
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
C. Morales
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
F. Allibert
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
P. Perreau
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
S. Pocas
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
S. Personnic
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
C. Lagahe-Blanchard
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
B. Ghyselen
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
YM Le Vaillant
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
Jalaguier
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
N. Kernevez
Affiliation:
CEA/LETI DTS / LTFC, 17 avenue des Martyrs, 38000 GRENOBLE, FRANCE
C. Mazure
Affiliation:
Soitec S.A., Advanced Technologies Department, Parc technologique des Fontaines, 38190 Bernin, France
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Abstract

First results on formation of thin film GeOI structures by the Smart Cut™ technology are presented in this paper. Thin single crystal layers of Ge have been successfully transferred, via oxide bonding layer, onto standard Si substrates with diameters ranging from 100 to 200 mm. Compared to SOI manufacturing, the development of GeOI requires adaptation to the available germanium material, since the starting material can be either bulk Ge or an epitaxial layer. Some results will be presented for GeOI formation according to the different technological options. Germanium splitting kinetics will be discussed and compared to already published results. To show good quality of the GeOI structures, detailed characterization has been done by TEM cross sections for defect densities, interfaces abruptness and layers homogeneities evaluation. AFM was used for surface roughness measurements. These results help define procedures that are required to achieve large diameter high quality GeOI structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[] Chui, C. et al. , in IEEE Proceedings of Int..Electron Device Meeting (IEDM), 437 (2002).Google Scholar
[2] Bedell, S. et al. , Journal of Applied Physics, Vol. 90, N°3, (2001).CrossRefGoogle Scholar
[3] , Tong et al. , Applied Physics Letters, vol. 70, 1390, 1997 CrossRefGoogle Scholar
[4] Hartmann, J.M., Abbadie, A., Papon, A.M., Holliger, P., Rolland, G., Billon, T., Fédéli, J.M., Rouvière, M., Vivien, L. and Laval, S., J. Appl. Phys. (15 th of May 2004).Google Scholar
[5] Cristoloveanu, S., Munteanu, D. and Liu, M. S. T., IEEE Trans. El. Dev., vol. 47, n° 5, May 2000, pp. 10181027.CrossRefGoogle Scholar
[6] Allibert, F., Pretet, J., Ernst, T. and Cristoloveanu, S., Proc. of the SOI Develop. and Appl. Workshop, Altis semiconductor, Sept 2000.Google Scholar
[7] Hovel, H.J., Solid -State Electronics 47 (2003) 13111333 CrossRefGoogle Scholar

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