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GaN Photonic-Crystal Surface-Emitting Laser

Published online by Cambridge University Press:  31 January 2011

Susumu Yoshimoto
Affiliation:
s-yoshi@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Hideki Matsubara
Affiliation:
matsubara-hideki@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Kyoto, Japan
Kyosuke Sakai
Affiliation:
sakai@qoe.kuee.kyoto-u.ac.jp, Kyoto University, Pioneering Research Unit for Next Generation, Kyoto, Japan
Susumu Noda
Affiliation:
snoda@kuee.kyoto-u.ac.jp, Kyoto University, Electronic Science and Engineering, Kyoto, Japan
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Abstract

We introduce the lasing principle and important characteristics of photonic-crystal surface-emitting laser (PC-SELs). Specifically, we demonstrate two-dimensional coherent lasing oscillation with GaN PC-SELs, using a unique crystal growth technique called “air hole retained overgrowth” (AROG). Above the threshold, we obtained a two-dimensionally distributed near-field pattern, and a distinctive far-field pattern with a divergence angle less than 1°. We also investigate a suitable sample structure for the reduction of the threshold current, where the PC structure is moved from an n-cladding layer to a p-cladding one. This is an important step towards the realization of novel light sources that can be integrated two dimensionally for a variety of new scientific and engineering applications in the blue to ultraviolet wavelengths.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

1 Imada, M., et al, Appl. Phys. Lett. 75, 316 (1999).10.1063/1.124361CrossRefGoogle Scholar
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5 Matsubara, H., Noda, S., et al, Science 319, 445 (2008)CrossRefGoogle Scholar
6 Usui, A., et al, Jpn. J. Appl. Phys. 36, L899 (1997).CrossRefGoogle Scholar

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