Hostname: page-component-5db6c4db9b-wnbrb Total loading time: 0 Render date: 2023-03-26T23:07:14.734Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true
  • English

GaAs Solar Cell Using an Alternate Arsenic Source

Published online by Cambridge University Press:  28 February 2011

V. S. Sundaram ,
J. E. Avery ,
G. R. Girard ,
H. E. Hager ,
A. G. Thompson  and
L. M. Fraas
V. S. Sundaram
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
J. E. Avery
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
G. R. Girard
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
H. E. Hager
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
A. G. Thompson
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
L. M. Fraas
Affiliation:
High Technology Center, Boeing Electronics, P.O. Box 24969 MS 9Z-80 Seattle, WA 98124-6269
Get access

Abstract

Using an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 211
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Stringfellow, G.B., J. Electron. Mater. 17, 327 (1988).CrossRefGoogle Scholar
2. Lum, R.M. and Klingert, J.K., J. Cryst. Growth 89, 137 (1988)CrossRefGoogle Scholar
3. Chen, C.H., Larsen, C.A. and Stringfellow, G.B., Appl. Phys. Lett. 50, 218 (1987).CrossRefGoogle Scholar
4.American Cyanamid Company, Wayne, NJ 07470, USA, Application Note 3, Nov. 1988.Google Scholar
5. Roth, A.P., Charbonneau, S. and Goodchild, G.F., J. Appl. Phys. 54, 5350 (1983).CrossRefGoogle Scholar
6. Sahai, R., Edwall, D.D. and Harris, J.S. Jr in Proceedings of the 13th Photovoltaics Specialists Conference, (IEEE New York 1978) p. 246.Google Scholar