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The Formation Al2O3/V2O3 Multilayer Structures by High-Dose Ion Implantation

Published online by Cambridge University Press:  15 February 2011

Laurence A. Gea
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
L. A. Boatner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
Janet Rankin
Affiliation:
Brown University, Providence, RI 02912
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831
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Abstract

High-resolution TEM, RBS-channeling and x-ray-diffraction techniques have been used to characterize multilayered structures formed by the high-dose co-implantation of vanadium and oxygen into single crystals of cx-A1203. Thin, two-dimensional multilayered structures have been formed by implanting c -axis and a -axis-oriented single crystals of A1203 at room temperature with vanadium (1017 ions/cm2 at 300 keV) and oxygen (2 × 1017 ions/cm 2, 120 keV) followed by a rapid anneal at 1000ºC. Cross-sectional TEM studies showed thatthis process produced a buried layer of V2O3 located about 120 nm below the A12O3 surface. X-raydiffraction investigations revealed that this layer is epitaxially oriented in three dimensions with respect to the host A12O3 lattice. The orientational relationship was subsequently confirmed by RBS/ channeling techniques. V2O3 exhibits a first-order phase transition at about 155 K that is accompanied by striking changes in its electrical and opticalproperties, and this phase transition was observed through in-situ TEM cooling studies ofcross-sectional samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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