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Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

Published online by Cambridge University Press:  17 March 2011

Mark E. Overberg
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Gerald T. Thaler
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Rachel M. Frazier
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Brent P. Gila
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Cammy R. Abernathy
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Stephen J. Pearton
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Nikoleta A. Theodoropoulou
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Stephen B. Arnason
Affiliation:
Department of Materials Science, University of Florida, Gainesville, FL 32611, U.S.A.
Arthur F. Hebard
Affiliation:
Department of Physics, University of Florida, Gainesville, FL 32611, U.S.A.
Yun D. Park
Affiliation:
Department of Physics, Seoul National University, Seoul, South Korea
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Abstract

Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

(1) Ohno, H., Science 281, p. 951 (1998).CrossRefGoogle Scholar
(2) Munekata, H., Zaslavsky, A., Fumagalli, P., and Gambino, R. J., Appl. Phys. Lett. 63, p. 2929 (1993).CrossRefGoogle Scholar
(3) Matukura, F., Abe, E., and Ohno, H., J. Appl. Phys. 87, p. 6442 (2000).CrossRefGoogle Scholar
(4) Prinz, G., Science 282, p. 1660 (1998).CrossRefGoogle Scholar
(5) Awschalom, D. D. and Kawakami, R. K., Nature 408, p. 923 (2000).CrossRefGoogle Scholar
(6) Jonker, B. T., Park, Y. D., Bennett, B. R., Cheong, H. D., Kioseoglou, G., and Petrou, A., Phys. Rev. B 62, p. 8180 (2000).CrossRefGoogle Scholar
(7) Zhu, H. J., Ramsteiner, M., Kostial, H., Wassermeier, M., Schönherr, H.-P., and Ploog, K. H., Phys. Rev. Lett. 87, p. 016601 (2001).CrossRefGoogle Scholar
(8) Dietl, T., Ohno, H., Matsukara, F., Cibert, J., and Ferrand, D., Science 287, p. 1019 (2000).CrossRefGoogle Scholar
(9) Lee, B., Jungwirth, T., and MacDonald, A. H., Phys. Rev. B 61, p. 15606 (2000).CrossRefGoogle Scholar
(10) Berciu, M. and Bhatt, R. N., Phys. Rev. Lett 87, p. 107203–1 (2001).CrossRefGoogle Scholar
(11) Gebicki, W., Strzeszewski, J., Kamler, G., Szyszko, T. and Podsliado, S., Appl. Phys. Lett. 76, p. 3870 (2000).CrossRefGoogle Scholar
(12) Zajac, M., Doradzinski, R., Gosk, J., Szczyko, J., Lefeld-Sosnowska, M., Kaminska, M., Twardowski, A., Palczewska, M., Grzanka, E. and Gebicki, W., Appl. Phys. Lett. 78, p. 1276 (2001).CrossRefGoogle Scholar
(13) Reed, M. L., El-Masry, N. A., Stadelmaier, H. H., Ritums, M. K., Reed, M. J., Parker, C. A., Roberts, J. C., and Bedair, S. M., Appl. Phys. Lett. 79, p. 3473 (2001).CrossRefGoogle Scholar
(14) Nanoscale Magnetic Regions Formed in GaN Implanted with Mn,” Theodoropoulou, N., Lee, K.P., Overberg, M.E., Chu, S.N.G., Hebard, A.F., Abernathy, C.R., Pearton, S.J., and Wilson, R.G., J. Nanosci. Nanotech., 1, p. 101 (2001).CrossRefGoogle Scholar
(15) Overberg, M. E., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K. T. and Hebard, A. F., Appl. Phys. Lett. 79, p. 1312 (2001).CrossRefGoogle Scholar
(16) Overberg, M. E., Gila, B. P., Abernathy, C. R., Pearton, S. J., Theodoropoulou, N. A., McCarthy, K.T., Arnason, S. B., and Hebard, A. F., Appl. Phys. Lett. 79, p. 3128, (2001).CrossRefGoogle Scholar

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Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP
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