Skip to main content Accessibility help
×
Home
Hostname: page-component-747cfc64b6-ngm8v Total loading time: 0.385 Render date: 2021-06-14T16:52:43.917Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers

Published online by Cambridge University Press:  11 February 2011

Dinghua Bao
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo, 152–8552, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo, 152–8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo, 152–8552, Japan
Nobuyasu Mizutani
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo, 152–8552, Japan
Get access

Abstract

(Bi,La)4Ti3O12 (BLT) thin films with various Bi2O3 template layers were prepared on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. Both of the BLT films with a thin Bi2O3 template layer and those without a Bi2O3 layer had a highly c-axis oriented growth, while both of the BLT films with a thin Bi2O3 bottom layer and those with a Bi2O3 intermediate layer were highly c-axis oriented. It was found that the use of Bi2O3 template layers improved significantly the ferroelectric properties of BLT thin films. In addition, the thin films with a thin Bi2O3 template layer showed good dielectric properties. All the capacitors with Bi2O3 template layers showed high polarization fatigue resistance and good retention properties.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Aizawa, K., Tokumitsu, E., Okamoto, K. and Ishiwara, H., Appl. Phys. Lett. 76, 2609 (2000).CrossRefGoogle Scholar
2. Bao, D. H., Wakiya, N., Shinozaki, K. and Mizutani, N., J. Phys. D: Appl. Phys. 35, L1 (2002).CrossRefGoogle Scholar
3. Lee, H. N., Hesse, D., Zakharov, N. and Gosele, U., Science, 296, 2002 (2002).Google Scholar
4. Bao, D. H., Wakiya, N., Shinozaki, K., Mizutani, N., and Yao, X., J. Appl. Phys. 90, 506 (2001).CrossRefGoogle Scholar
5. Bao, D. H., Wakiya, N., Shinozaki, K., Mizutani, N. and Yao, X., Appl. Phys. Lett. 78, 3286 (2001).CrossRefGoogle Scholar
6. Dinu, R., Dinescu, M., Pedarnig, J. D., Gunasekaran, R. A., Bauerle, D., Bauer-Gononea, S. and Bauer, S., Appl. Phys. A 69, 55 (1999).CrossRefGoogle Scholar
7. Zanetti, S. M., Ducler, J. R., Guilloux-Viry, M., Bouquet, V., Leite, E. R., Longo, E., Varela, J. A. and Perrin, A., J. Eur. Ceram. Soc. 21, 2199 (2001).CrossRefGoogle Scholar
8. Park, Y. B., Jang, S. M., Lee, J. K., et al., J. Vac. Sci. Technol. A 18, 17 (2000).CrossRefGoogle Scholar
9. Shin, W. and Yoon, S., Appl. Phys. Lett. 79, 1519 (2001).CrossRefGoogle Scholar
10. Dawley, J. T., Radspinner, R., Zelinski, B. J. J. and Uhlmann, D. R., J. Sol-Gel Sci. Technol. 20, 85 (2001).CrossRefGoogle Scholar
11. Kim, C. H., Lee, J. K., Suh, H. S., Yi, J. Y., Hong, K. S. and Hahn, J. S., Jpn. J. Appl. Phys. Part 1, 41, 1495(2002).CrossRefGoogle Scholar
12. Park, B. H., Kang, B. S., Bu, S. D., Noh, T. W., Lee, J. and Jo, W., Nature, 401, 682 (1999).CrossRefGoogle Scholar
13. Al-Shareef, H. N., Tuttle, B. A., Warren, W. L., Headley, T. J., Dimos, D., Voigt, J. A. and Nasby, R. D., J. Appl. Phys. 79, 1013 (1996).CrossRefGoogle Scholar
14. Kang, B. S., Park, B. H., Bu, S. D., Kang, S. H. and Noh, T. W., Appl. Phys. Lett. 75, 2644 (1999).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Ferroelectric and Dielectric Properties of Chemical-Solution-Derived Bismuth Lanthanum Titanate Thin Films with Various Bismuth Oxide Template layers
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *