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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF3

Published online by Cambridge University Press:  01 February 2011

Ronald Hellriegel
Affiliation:
rh3@directbox.com, Infineon Technologies SC300 GmbH & Co.OHG, ETCH 300, Königsbruecker Strasse 180, Dresden, N/A, 01099, Germany, +49 (0351) 886-7549, +49 (0351) 886-7319
Bernd Hintze
Affiliation:
bernd.hintze@infineon.com, Infineon Technologies SC300 GmbH & Co.OHG, Königsbrücker Strasse 180, Dresden, N/A, 01099, Germany
Hubert Winzig
Affiliation:
hubert.winzig@infineon.com, Infineon Technologies SC300 GmbH & Co.OHG, Königsbrücker Strasse 180, Dresden, N/A, 01099, Germany
Matthias Albert
Affiliation:
albert@ihm.et.tu-dresden.de, TU-Dresden, Institut für Halbleiter- und Mikroelektronik, Nöthnitzer Str. 64, Dresden, N/A, 01062, Germany
Johann W. Bartha
Affiliation:
bartha@ihm.et.tu-dresden.de, TU-Dresden, Institut für Halbleiter- und Mikroelektronik, Nöthnitzer Str. 64, Dresden, N/A, 01062, Germany
Thomas Schwarze
Affiliation:
Thomas.Schwarze@solvay.com, Solvay Fluor GmbH, Hans-Böckler-Allee 20, Hannover, N/A, 30173, Germany
Michael Pittroff
Affiliation:
Michael.Pittroff@solvay.com, Solvay Fluor GmbH, Hans-Böckler-Allee 20, Hannover, N/A, 30173, Germany
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Abstract

Deposition steps in CVD and ALD applications usually not only cover the surface of the substrate surface but also the walls of the chamber inside. Regular removal of those residuals has to be done to obtain stable and repeatable deposition results with uniform surfaces at acceptable particle levels. The high requirements to sustain stable processes has lead to more frequent chamber cleans. NF3 has emerged as the main clean gas for remote clean applications. While it meets the above mentioned requirements and is considered to fit easily into the fab gas supply it is relatively expensive. The work presented here investigates argon/nitrogen diluted fluorine (F2) as an alternative clean gas with a significantly reduced environmentally destructive global warming emission (GWP). The cleaning behaviour with respect to different materials (SiON, TaN, TiN, W, SiO2) was studied. It is found that in general argon/nitrogen diluted fluorine achieves etch rates comparable to those obtained by NF3 when the comparison is based on the amount of fluorine transported into the reactor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

references

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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF3
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Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF3
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