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Fabrication of Thermoelectric Devices Using AlInN and InON Films prepared by reactive radio-frequency sputtering

Published online by Cambridge University Press:  01 February 2011

S. Yamaguchi
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
R. Izaki
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
N. Kaiwa
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
S. Sugimura
Affiliation:
Department of Electrical, Electronic and Information Engineering, Kanagawa University, 3–27–1 Rokkakubashi, Kanagawa-ku, Yokohama, 221–8686, Japan
A. Yamamoto
Affiliation:
Energy Electronics Institute, National Institute of Advanced Industrial Science and Technology, AIST Tsukuba Central 2 Umezono 1–1–1, Tsukuba, Japan, 305–8568
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Abstract

We have studied the thermoelectric properties of AlInN and InON films prepared by reactive radio-frequency (RF) sputtering. We have fabricated thermoelectric devices which are composed of 20-pair nitride or oxynitride films with Chromel metal. For a AlInN device, the maximum output power was 7.6×10-7 W at ΔT = 257K, and for a InON device, that was 6.5×10-8 W at ΔT = 214K.

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Copyright
Copyright © Materials Research Society 2004

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References

1. Mahan, G., Sales, B., and Sharp, J., Phys. Today 50, 42 (1997).CrossRefGoogle Scholar
2. Mahan, G. D., Solid State Phys. 51, 81 (1998).CrossRefGoogle Scholar
3. Shin, W., Murayama, M., Ikeda, K., and Sago, S., Jpn. J. Appl. Phys. 39, 1254 (2000).CrossRefGoogle Scholar
4. Bhattacharya, S., Pope, A. L., Littleton, R. T., Tritt, T. M., Ponnambalam, V., Xia, Y., and Poon, S. J., Appl. Phys. Lett. 77, 2476 (2000).CrossRefGoogle Scholar
5. Dismukes, J. P., Ekstrom, L., Steigmeier, E. F., Kudman, I., and Beers, D. S., J. Appl. Phys. 35, 2899 (1964).CrossRefGoogle Scholar
6. Sales, B. C., Mandrus, D., and Williams, R. K., Sicence 272, 1325 (1996).CrossRefGoogle Scholar
7. Yamaguchi, S., Izaki, R., Yamagiwa, K., Taki, K., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. ( in press).Google Scholar
8. Yamaguchi, S., Kariya, M., Nitta, S., Amano, H., and Akasaki, I., Appl. Phys. Lett. 76, 876 (2000).CrossRefGoogle Scholar
9. Yamaguchi, S., Iwamura, Y., and Yamamoto, A., Jpn. J. Appl. Phys. 41, L1354 (2002).CrossRefGoogle Scholar
10. Yamaguchi, S., Iwamura, Y., and Yamamoto, A., Appl. Phys. Lett. 82, 2065 (2003).CrossRefGoogle Scholar

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