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Fabrication of Nitrided Mask on GaAs surface and Its Machinability for STM lithography

Published online by Cambridge University Press:  01 February 2011

Yo Yamamoto
Affiliation:
yooym@ccmfs.meijo-u.ac.jp, Meijo Univ., 21stCentury COE Program, 1-501Shiogamagudhi,Tempakuku, NAGOYA, N/A, N/A, Japan
Sota MATSUOKA
Affiliation:
m0534031@ccmailg.meijo-u.ac.jp, Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Toshiyuki Kondo
Affiliation:
m0434016@ccmailg.meijo-u.ac.jp, Meijo Univ., Dept. of Matterrials Science and Engineering, Japan
Takahiro Maruyama
Affiliation:
takamaru@ccmfs.meijo-u.ac.jp
Shigeya Naritsuka
Affiliation:
narit@ccmfs.meijo-u.ac.jp, Japan
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Abstract

A nitridation mask on a GaAs surface was prepared using RF-MBE and its machinability by STM lithography was studied. A 5.2 nm thick crystal-like layer was formed at 350°C, and was modified by STM at a sample bias of ±80V with good size reliability, which was sufficiently fine for realizing dislocation-free heteroepitaxial growth of GaAs / Si. The mask was maintained up to 620°C under As flux exposure at 1.5 × 10−4 Pa.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

[1] Nishinaga, T., Nakano, T. and Zhang, S., Jpn. J. Appl. Phys. 27 (1988) L694.Google Scholar
[2] Zhang, S. and Nishinaga, T., J. Cryst. Growth. 99 (1990) 292.10.1016/0022-0248(90)90530-XCrossRefGoogle Scholar
[3] Suzuki, Y. and Nishinaga, T., Jpn. J. Appl. Phys. 28 (1989) 440.10.1143/JJAP.28.440CrossRefGoogle Scholar
[4] Bargman, R., Bauser, E. and Werner, J. H., Appl. Phys. Lett. 57 (1990) 351.CrossRefGoogle Scholar
[5] Bargman, R., J. Cryst. Growth 110 (1991) 823.10.1016/0022-0248(91)90640-QCrossRefGoogle Scholar
[6] Zhang, S. and Nishinaga, T., Jpn. J. Appl. Phys. 29 (1990) 545.CrossRefGoogle Scholar
[7] Yamamoto, Y., Kondo, T., Matsuoka, S., Maruyama, T. and Naritsuka, S., Proc. of 24th Electronic Materials Symposium, (2005) K13.Google Scholar
[8] Naritsuka, S. ‘Studies of High Quality InP Layers Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth’, Doctoral thesis, University of Tokyo, (1995).Google Scholar

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