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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

Published online by Cambridge University Press:  01 February 2011

Yuki Niiyama
Affiliation:
niyama.yuki@furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan, +81-45-311-1218, +81-45-316-6374
Sadahiro Kato
Affiliation:
sadakato@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Yoshihiro Sato
Affiliation:
ysatoh@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Masayuki Iwami
Affiliation:
iwami@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Jiang Li
Affiliation:
ljiang@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hironari Takehara
Affiliation:
mrf02008@mr.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Hiroshi Kambayashi
Affiliation:
kambayashi.hiroshi@furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Nariaki Ikeda
Affiliation:
nariaki@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
Seikoh Yoshida
Affiliation:
seikoh@yokoken.furukawa.co.jp, The Furukawa Electric, Co., Ltd., Yokohama R&D Laboratories, 2-4-3, Okano, Nishi-ku, Yokohama, 220-0073, Japan
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Abstract

We investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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