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Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN

Published online by Cambridge University Press:  01 February 2011

Nobuyuki Ito
Affiliation:
i04r3205@k.hosei.ac.jp, Hosei University, ECEE, 3-7-2 Kajinocho, Koganei, Tokyo, 184-8584, Japan, +81-42-387-6091, +81-42-387-6095
Akira Suzuki
Affiliation:
i04r3205@k.hosei.ac.jp, Hosei University, EECE, Japan
Mitsunori Kawamura
Affiliation:
i04r3205@k.hosei.ac.jp, Hosei University, EECE, Japan
Kazuki Nomoto
Affiliation:
i04r3233@k.hosei.ac.jp, Hosei University, EECE, Japan
Takeshi Kasai
Affiliation:
i04r3205@k.hosei.ac.jp, Chemitronics, Japan
Tomoyoshi Mishima
Affiliation:
i04r3205@k.hosei.ac.jp, Hitachi Cable, Japan
Taroh Inada
Affiliation:
i04r3205@k.hosei.ac.jp, Hosei University, EECE, Japan
Tohru Nakamura
Affiliation:
tohru@k.hosei.ac.jp, Hosei University, EECE, Japan
Masataka Satoh
Affiliation:
mah@ionbeam.hosei.ac.jp, Hosei University, EECE, Japan
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Abstract

Ti/Al ohmic contact with an extremely low specific contact resistance has been formed by the deposition of Ti and Al films on Si+ lanted GaN. The ohmic contact formed by annealing at 600 o C of Ti film with a thickness of 50 nm and Al film with a thickness of 200 nm reveals the good smooth surface and uniform structure as compare to those of contacts formed above 700 °C, which is correlated to whether the Al-Ti alloy is melted during the annealing of ohmic contact or not. The specific contact resistance of 2 × 10-6Ω-cm2 is obtained for Si+ implanted GaN with a dose of 5 × 1013 cm-2. As Si ion dose increases to 5 × 1014 /cm2, the specific contact resistance is reduced to 2 × 10-8 Ω-cm2. It is revealed that the selective doping at high impurity concentration in the surface region by Si+ implantation is useful to reduce the contact resistance for Ti/Al contact to GaN.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Fabrication and electrical characteristics of Ti/Al ohmic contact to Si+ implanted GaN
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