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Fabrication and Current-Voltage Characteristics of Ni Spin Quantum Cross Devices with P3HT:PCBM Organic Materials

Published online by Cambridge University Press:  01 February 2011

Hideo Kaiju
Affiliation:
kaiju@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
Kenji Kondo
Affiliation:
kkondo@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
Nubla Basheer
Affiliation:
nublabasheer@gmail.com, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
Nobuyoshi Kawaguchi
Affiliation:
nkawa@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
Susanne White
Affiliation:
susannewhite@mail.sci.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
Akihiko Hirata
Affiliation:
hirata@wpi-aimr.tohoku.ac.jp, The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Manabu Ishimaru
Affiliation:
ishimaru@sanken.osaka-u.ac.jp, The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Yoshihiko Hirotsu
Affiliation:
yhirotsu@sanken.osaka-u.ac.jp, The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Akira Ishibashi
Affiliation:
i-akira@es.hokudai.ac.jp, Research Institute for Electronic Science, Hokkaido University, Laboratory of Quantum Electronics, Sapporo, Japan
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Abstract

We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm × 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high on/off ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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Fabrication and Current-Voltage Characteristics of Ni Spin Quantum Cross Devices with P3HT:PCBM Organic Materials
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