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Extremely Narrow Band Gap,∼1·50Ev, Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

K. Fukutani
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
T. Sugawara
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
W Futako
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
T. Kamiya
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
C.M. Fortmann
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
I. Shimizu
Affiliation:
Dept. of Innovative and Engineering Materials, Tokyo Institute of Technology, Yokohama 226-8502, JAPAN
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Abstract

Hydrogenated amorphous silicon (a-Si:H) films were prepared by a layer-by-layer (LBL) argon treatment technique. Thin amorphous silicon layers are first deposited and then treated by Ar. Thick films are built up by repeatedly the process many times. By reducing the deposition rate during deposition time (T, sec), a-Si:H with the gaps narrower than 1·55eV were prepared at substrate temperature lower than 300°C. These narrow-gap films contained less than 2 at.% hydrogen and had rigid Si network. Also, these narrow gap films exhibited good light soaking stability.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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