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Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing

Published online by Cambridge University Press:  10 February 2011

Patrick S. Lysaght ,
Billy Nguyen ,
Joe Bennett ,
Gary Williamson ,
Kenneth Torres ,
Mark Gilmer ,
Tien-Ying Luo ,
David Brady ,
Jay Guan  and
George A. Brown
...Show all authors
Patrick S. Lysaght
Affiliation:
SEMATECH, AUSTIN, TX.
Billy Nguyen
Affiliation:
SEMATECH, AUSTIN, TX.
Joe Bennett
Affiliation:
SEMATECH, AUSTIN, TX.
Gary Williamson
Affiliation:
SEMATECH, AUSTIN, TX.
Kenneth Torres
Affiliation:
SEMATECH, AUSTIN, TX.
Mark Gilmer
Affiliation:
SEMATECH, AUSTIN, TX.
Tien-Ying Luo
Affiliation:
SEMATECH, AUSTIN, TX.
David Brady
Affiliation:
SEMATECH, AUSTIN, TX.
Jay Guan
Affiliation:
SEMATECH, AUSTIN, TX.
George A. Brown
Affiliation:
SEMATECH, AUSTIN, TX.
Peter Zeitzoff
Affiliation:
SEMATECH, AUSTIN, TX.
Gennadi Bersuker
Affiliation:
SEMATECH, AUSTIN, TX.
Jay Mucha
Affiliation:
SEMATECH, AUSTIN, TX.
Franz Geyling
Affiliation:
SEMATECH, AUSTIN, TX.
Gabriel Gebara
Affiliation:
SEMATECH, AUSTIN, TX.
Lucky Vishnubhotla
Affiliation:
SEMATECH, AUSTIN, TX.
Michael D. Jackson
Affiliation:
SEMATECH, AUSTIN, TX.
Howard R. Huff
Affiliation:
SEMATECH, AUSTIN, TX.
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Abstract

The redistribution of nitrogen from silicon to the Si-SiO2 interface due to thermal processing is investigated by Secondary Ion Mass Spectroscopy (SIMS) using Metal-Oxide-Semiconductor (MOS) capacitors. SIMS profiles of implanted atomic nitrogen concentration indicate a significant redistribution of the nitrogen, from the silicon to the oxide layer in response to variations of the steady state time and temperature parameters of Rapid Thermal Anneal (RTA) processing. RTA treatment, in N2 ambient, over a temperature range of 750°C - 1100°C, results in a measured increase of the integrated nitrogen peak at the interface. High Frequency Capacitance Voltage (HFCV) measurements of an implanted (N/ 5 × 1014 cm2/s / 26keV) and annealed (900°C / 10s) sample is compared with a control (without N implant) sample to determine the relative nitrogen abundance at the interface. This value corresponds to the increase in fixed oxide charge Q that produces a negative shift in the flat band voltage Vo under negative gate bias conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 283
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

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