Skip to main content Accessibility help
×
Home
Hostname: page-component-564cf476b6-qxxll Total loading time: 0.24 Render date: 2021-06-21T17:44:00.891Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing

Published online by Cambridge University Press:  10 February 2011

Patrick S. Lysaght
Affiliation:
SEMATECH, AUSTIN, TX.
Billy Nguyen
Affiliation:
SEMATECH, AUSTIN, TX.
Joe Bennett
Affiliation:
SEMATECH, AUSTIN, TX.
Gary Williamson
Affiliation:
SEMATECH, AUSTIN, TX.
Kenneth Torres
Affiliation:
SEMATECH, AUSTIN, TX.
Mark Gilmer
Affiliation:
SEMATECH, AUSTIN, TX.
Tien-Ying Luo
Affiliation:
SEMATECH, AUSTIN, TX.
David Brady
Affiliation:
SEMATECH, AUSTIN, TX.
Jay Guan
Affiliation:
SEMATECH, AUSTIN, TX.
George A. Brown
Affiliation:
SEMATECH, AUSTIN, TX.
Peter Zeitzoff
Affiliation:
SEMATECH, AUSTIN, TX.
Gennadi Bersuker
Affiliation:
SEMATECH, AUSTIN, TX.
Jay Mucha
Affiliation:
SEMATECH, AUSTIN, TX.
Franz Geyling
Affiliation:
SEMATECH, AUSTIN, TX.
Gabriel Gebara
Affiliation:
SEMATECH, AUSTIN, TX.
Lucky Vishnubhotla
Affiliation:
SEMATECH, AUSTIN, TX.
Michael D. Jackson
Affiliation:
SEMATECH, AUSTIN, TX.
Howard R. Huff
Affiliation:
SEMATECH, AUSTIN, TX.
Get access

Abstract

The redistribution of nitrogen from silicon to the Si-SiO2 interface due to thermal processing is investigated by Secondary Ion Mass Spectroscopy (SIMS) using Metal-Oxide-Semiconductor (MOS) capacitors. SIMS profiles of implanted atomic nitrogen concentration indicate a significant redistribution of the nitrogen, from the silicon to the oxide layer in response to variations of the steady state time and temperature parameters of Rapid Thermal Anneal (RTA) processing. RTA treatment, in N2 ambient, over a temperature range of 750°C - 1100°C, results in a measured increase of the integrated nitrogen peak at the interface. High Frequency Capacitance Voltage (HFCV) measurements of an implanted (N/ 5 × 1014 cm2/s / 26keV) and annealed (900°C / 10s) sample is compared with a control (without N implant) sample to determine the relative nitrogen abundance at the interface. This value corresponds to the increase in fixed oxide charge Q that produces a negative shift in the flat band voltage Vo under negative gate bias conditions.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Ziegler, J. F. and Biersack, J. P., The Stopping and Range of Ions in Solids,Pergamon Press, New York 1990.Google Scholar
2. Grove, A. S., Leistiko, O. Jr., and Sah, C. T., Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon,J. App. Phys. Vol. 35, No 9 (1964)CrossRefGoogle Scholar
3. Mayer, James W. and Lau, S. S., Electronic Materials Science: For Integrated Circuits in Si and GaAs Macmillan Publishing Company, New York, 1990, p. 190.Google Scholar
4. Mayer, James W. and Lau, S. S., Electronic Materials Science: For Integrated Circuits in Si and GaAs Macmillan Publishing Company, New York, 1990, p. 210.Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Experimental Observations of the Redistribution of Implanted Nitrogen at the Si-SiO2 Interface During RTA Processing
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *