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Evolution of Microstructure During Low-Temperature Solid Phase Epitaxial Growth of SiξGe1-ξ on Si(001)

Published online by Cambridge University Press:  21 February 2011

G. Ramanath
Affiliation:
Department of Materials Science and Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
H. Z. Xiao
Affiliation:
Department of Materials Science and Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
S. L. Lai
Affiliation:
Department of Materials Science and Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
Z. Ma
Affiliation:
Digital Equipment Corporation, Hudson, MA.
L. H. Allen
Affiliation:
Department of Materials Science and Engineering and Coordinated Science Laboratory, University of Illinois, Urbana, IL 61801.
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Aabstract:

The evolution of microstructure during Au-mediated solid phase epitaxial growth of a SiGe alloy film on Si(001) (c-Si) was investigated by in situ resistance measurements, X-ray diffraction, conventional and high-resolution transmission electron microscopy, and chemical microanalyis. Annealing a-Ge/Au bilayers on c-Si to temperatures below 120°C caused changes primarily in the microstructure of the Au film. Increases in temperature to ≃150°C resulted in the diffusion of Ge through the grain boundaries of Au. The Au, displaced by crystalline Ge at the grain boundaries, diffused along columnar voids of amorphous Ge (a-Ge) leading to the formation of Au-rich crystallites in the top layer. Results indicate that the Ge that had reached the Au/c-Si interface grew epitaxially on c-Si at temperatures below 150°C. As the temperature was further increased, some Si from the substrate dissolved into Au and got incorporated in the growing epilayer. At 310°C, the initial Au film was displaced completely by a laterally continuous Siξ Gei.ξ (ξ ∼ 0.2) epilayer whose thickness was limited by that of the initial Au film. Twins, and residual amounts of Au near the SiGe/c-Si interface, were the predominant defects observed in the SiGe epilayer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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Evolution of Microstructure During Low-Temperature Solid Phase Epitaxial Growth of SiξGe1-ξ on Si(001)
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