Skip to main content Accessibility help
×
Home
Hostname: page-component-568f69f84b-4g88t Total loading time: 0.269 Render date: 2021-09-19T17:28:13.013Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy

Published online by Cambridge University Press:  01 February 2011

Houssam Chouaib
Affiliation:
Laboratoire de Physique de la Matière, UMRCNRS 5511 – INSA – Bât Blaise Pascal, 7 avenue Jean Capelle – 69621 Villeurbanne Cedex – France
Catherine Bru-Chevallier
Affiliation:
Laboratoire de Physique de la Matière, UMRCNRS 5511 – INSA – Bât Blaise Pascal, 7 avenue Jean Capelle – 69621 Villeurbanne Cedex – France
Taha Benyattou
Affiliation:
Laboratoire de Physique de la Matière, UMRCNRS 5511 – INSA – Bât Blaise Pascal, 7 avenue Jean Capelle – 69621 Villeurbanne Cedex – France
Hacene Lahreche
Affiliation:
Picogiga – les Ulis - France
Philippe Bove
Affiliation:
Picogiga – les Ulis - France
Get access

Abstract

GaAsSb is a promising material for the base of a new generation of Heterojunction Bipolar Transistors (HBT) on InP, as it is expected to allow the elaboration of high-speed digital circuits (80 to 100 Gbits/s). Emitter-base interfaces between GaAsSb and InP need to be well controlled to ensure good performance of the HBT, and this requires a careful analysis of both material and interface quality. Photoluminescence (PL) experiments as a function of temperature and of power excitation density, as well as photoreflectance (PR) measurements are performed on GaAsSb/InP heterostructures in order to get information about ordering and segregation effects in antimonide alloys.

From the PL recombination energy across the type II interface and at the GaAsSb band-edge, the band offset ΔEC between InP and GaAsSb is calculated. The evolution of the band to band PL recombination is studied as a function of temperature: the energy and intensity of the type I PL transition are shown to exhibit specific behaviors, which are typical of carrier localization effects in semiconductor alloys. At low temperature, the shape of the PR spectrum results in an atypical steplike background, which is analyzed as a band filling effect in consequence of the carrier localization on potential fluctuations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Watkins, S.P. et al 10th International conference on Vapor Phase Epitaxy, Sapporo Japan, (2000)Google Scholar
2. Dvorak, M.W., Bolognesi, C.R., Pitts, O.J., Watkins, S.P., IEEE EDL, 22, pp361363 (2001).CrossRefGoogle Scholar
3. Peter, M., Herres, N., Fuchs, F., Winkler, K., Bachem, K.H., Wagner, J., Appl. Phys. Lett. 74, p410 (1999).CrossRefGoogle Scholar
4. Hu, Xu, X. G., Stotz, J. A. H., Watkins, S. P., Curzon, A. E., and Thewalt., M. L. W., Appl. Phys. Lett. 73, No 19, P 2799 (1998)CrossRefGoogle Scholar
5. Street, R.A., Searle, T.M., Austin, I.G., The decay time and temperature dependence of photoluminescence in amorphous As2S3 proceeding of the 5th International conference on Amorphous and Liquid Semiconductors, 1974, II, pp. 953962.Google Scholar
6. M Driessen, F.A.J., Bauhuis, G.J., Olsthoorn, S.M., Giling, L.J Phys. Rev. B, Vol. 48 pp. 78897896. (1993).CrossRefGoogle Scholar
7. Grenouillet, L., Bru-Chevallier, C., Guillot, G., Gilet, P., Duvaut, P., Vannuffel, A., Million, A., Chenevas-Paule, A., Appl. Phys. Lett., 76, pp22412243 (2000)CrossRefGoogle Scholar
8. Kudrawiec, R., Sek, G., Misiewicz, J., Li, L.H., Harmand, J.C., Appl. Phys. Lett. 83 pp13791381 (2003)CrossRefGoogle Scholar
9. Baltagi, Y., Béarzi, E., Bru-Chevallier, C., Benyattou, T., Guillot, G., Harmand, J.C., Mat. Res. Soc. Symp. Proc. 406, pp333338 (1996).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Evidence for localization effects in GaAsSb/InP heterostructures from optical spectroscopy
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *