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Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers

Published online by Cambridge University Press:  11 February 2015

K. Hayashi
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
T. Yasuda
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
S. Katsuno
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
T. Takeuchi
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
S. Kamiyama
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
M. Iwaya
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan
I. Akasaki
Affiliation:
Faculty of Science and Technology, Meijo University, Nagoya, 468-8502, Japan Akasaki Research Center, Nagoya University, Nagoya, 464-8062, Japan
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Abstract

We have investigated an influence of positive polarization charges generated at an interface between GaN barrier/p-AlGaN EB (Electron Blocking) layer in a blue-LED. Simulation results suggested that such polarization charges caused an electron overflow from QWs. The simulation results also indicated that sufficient acceptor doping at the interface could neutralize the positive polarization charges and suppress the electron overflow. We then demonstrated the electron overflow caused by the positive polarization charges and its suppression with sufficient Mg doping at the interface by monitoring emissions from an additional second QW inserted between the p-EB layer and the p-GaN layer. Finally we conclude that the contribution of the electron overflow is not significant for the efficiency droop in blue-LEDs.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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Evaluation of electron overflow in nitride-based LEDs influenced by polarization charges at electron blocking layers
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