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Evaluation of Adhesion Between UV-cured SiOC Film and Si Substrate by Nanoindentation Method

Published online by Cambridge University Press:  01 February 2011

Masaaki Takeda
Affiliation:
Masaaki_Takeda@trc.toray.co.jp, Toray Research Center.,Inc, Material characterization labs, Otsu, Japan
Nobuhiro Matoba
Affiliation:
Nobuhiro_Matoba@trc.toray.co.jp, Toray Research Center.,Inc, Material characterization labs, Otsu, Japan
Manabu Oishi
Affiliation:
Manabu_Oishi@trc.toray.co.jp, Toray Research Center.,Inc, Material characterization labs, Otsu, Shiga, Japan
Mototsugu Sakai
Affiliation:
msakai@tutms.tut.ac.jp, Toyohashi University of Technology, Materials Science, Toyohashi, Aichi, Japan
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Abstract

It is important to quantitatively measure the adhesion strength at the interface in a small area of electronics devices to ensure their reliability. In this study, a simple technique for measuring the adhesion using the nanoindentation method by considering the energy balance during the indentation process was proposed and applied to measure the adhesion of three kinds of UV-cured SiOC films with a thickness of 500 nm on a Si substrate. The discontinuous points of approximately 300 nm in depth appeared in all the indentation curves with a high reproducibility, and it was confirmed that these points reflect the occurrence of an interfacial delamination. The total dissipated energies calculated from the load vs. indentation depth curves indicate a good correlation with the indentation load. The delamination energies can be estimated using this relationship. The energy release rates at the interface of the UV-cured SiOC films calculated from the energy balance increases with the increasing UV curing time. From these result, we can confirm the technique proposed in this study is quite useful to simply and quantitatively measure the adhesion, especially against a thin film or the small area, even if the film is ductile.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

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References

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