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Etching Characteristics During Cleaning of Silicon Surfaces by NF3-added Hydrogen and Water-Vapor Plasma Downstream Treatment

Published online by Cambridge University Press:  10 February 2011

Miki T. Suzuki
Affiliation:
Process Development Division, Fujitsu Ltd. 4-1-I Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan
Jun Kikuchi
Affiliation:
Process Development Division, Fujitsu Ltd. 4-1-I Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan
Mitsuaki Nagasaka
Affiliation:
Process Development Division, Fujitsu Ltd. 4-1-I Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan
Shuzo Fujimura
Affiliation:
Process Development Division, Fujitsu Ltd. 4-1-I Kamikodanaka, Nakahara-Ku, Kawasaki 211, Japan
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Abstract

Hydrogen and water vapor plasma downstream treatment with the downstream injection of NF3 removes native oxide from silicon surfaces. In contact hole cleaning, this dry processing is a promising alternative to HF wet treatment, which has a problem of expansion of hole diameter. We examined the etching characteristics of boron-phosphosilicate glass (B-PSG) films, as a typical oxide material for the side-walls of the contact holes and compared the etching depths of B-PSG and thermal oxide films. We found that the etching depths of B-PSG films fell to one third of those of thermal oxide films at lower treatment temperature. This result indicates that the expansion of contact hole diameters can be minimized.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Nisino, N., Hayasaka, N. and Okano, H.: J. Appl. Phys. 74 (1993) 1345.Google Scholar
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5. Kikuchi, J., Nagasaka, M., Fujimura, S., and Yano, H.: Jpn. J. Appl. Phys. 35 (1996) 1022.Google Scholar

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Etching Characteristics During Cleaning of Silicon Surfaces by NF3-added Hydrogen and Water-Vapor Plasma Downstream Treatment
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