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Epitaxial Growth of FeSi2 on (111)Si

Published online by Cambridge University Press:  22 February 2011

H.C. Cheng ,
L.J. Chen  and
T.R. Your
H.C. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
L.J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
T.R. Your
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, ROC.
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Abstract

Isothermal annealing, two step annealing and ion beam mixing were performed to induce interfacial reactions between iron thin films and silicon substrate. Both orthorhombic and tetragonal FeSi2 were found to grow epitaxially on (lll)Si with orthorhombic FeSi2 being the predominant phase. No epitaxial growth of FeSi2 on (001)Si was detected. Epitaxial islands as large as 40 μm in size were formed by a scheme combining ion beam mixing and two step annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 441
Copyright
Copyright © Materials Research Society 1984

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References

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