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Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

Published online by Cambridge University Press:  15 February 2011

E. Bellotti
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, kbrennan@ece.gatech.edu
B. Doshi
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, kbrennan@ece.gatech.edu
K. F. Brennan
Affiliation:
School of ECE, Georgia Tech, Atlanta, GA 30332, kbrennan@ece.gatech.edu
P. P. Ruden
Affiliation:
Dept. of ECE, University of Minnesota, Minneapolis, MN 55455
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Abstract

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride
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