Skip to main content Accessibility help
×
Home
Hostname: page-component-747cfc64b6-dwt4q Total loading time: 0.219 Render date: 2021-06-12T15:26:03.381Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon

Published online by Cambridge University Press:  01 February 2011

Nick Bennett
Affiliation:
nicholas.bennett@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, Guildford, N/A, N/A, United Kingdom, +441483686093
A. J. Smith
Affiliation:
a.j.smith@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
C. S. Beer
Affiliation:
c.s.beer@warwick.ac.uk, University of Warwick, Dept. of Physics, Coventry, N/A, N/A, United Kingdom
L. O'Reilly
Affiliation:
oreillyl@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin, N/A, N/A, Ireland
B. Colombeau
Affiliation:
b.colombeau@surrey.ac.uk, Chartered Semiconductor Manufacturing Ltd., 60 Woodlands, N/A, N/A, Singapore
G. D. Dilliway
Affiliation:
g.dilliway@surrey.ac.uk, IMEC, Leuven, N/A, N/A, Belgium
R. Harper
Affiliation:
rharper@iqesilicon.com, IQE Silicon Compounds Ltd., Cardiff, N/A, N/A, United Kingdom
P. J. McNally
Affiliation:
mcnallyp@eeng.dcu.ie, Dublin City University, School of Electronic Engineering, Dublin, N/A, N/A, Ireland
R. Gwilliam
Affiliation:
r.gwillian@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
N. E. B. Cowern
Affiliation:
ees1nc@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
B. J. Sealy
Affiliation:
b.sealy@surrey.ac.uk, University of Surrey, Advanced Technology Institute, Guildford, N/A, N/A, United Kingdom
Get access

Abstract

Sheet resistance (Rs) reductions are presented for antimony and arsenic doped layers produced in strained Si. Results re-emphasise the Rs reduction for As comes purely as a result of mobility improvement whereas for Sb, a superior lowering is observed from improvements in both mobility and activation. For the first time, strain is shown to enhance the activation of dopant atoms whilst Sb is seen to create stable ultra-shallow junctions. Our results propose Sb as a viable alternative to As for the creation of highly activated, low resistance ultra-shallow junctions for use with strain-engineered CMOS devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below.

References

1 Sugii, N., Irieda, S., Morioka, J., Inada, T., J. Appl. Phys., 96 (1), 261268 (2004)CrossRefGoogle Scholar
2 Dilliway, G. D. M., Smith, A. J., Hamilton, J. J., Benson, J., Xu, L., McNally, P. J., Cooke, G., Kheyrandish, H., Cowern, N. E. B., Proc. IIT NIM-B, 237, 131135 (2005).CrossRefGoogle Scholar
3 The International Technology Roadmap for Semiconductors 2005.Google Scholar
4 Alzanki, T., Gwilliam, R., Emerson, N., Sealy, B. J., Appl. Phys. Lett., 85, 11, 19791980 (2004).CrossRefGoogle Scholar
5 Alzanki, T., PhD Thesis, University of Surrey UK, 2003.Google Scholar
6 Bennett, N. S., Smith, A. J., Colombeau, B., Gwilliam, R., Cowern, N. E. B., Sealy, B. J., Mat. Sci. Eng. B, 124–125, 305309 (2005).CrossRefGoogle Scholar
7 Matthews, J. W., Blakeslee, A. E., J. Crystal Growth, 27, 118 (1974).Google Scholar
8 Sasaki, Y., Itoh, K., Inoue, E., Kishi, S., Mitsuishi, T., Solid-St. Electron., 31(1), 512 (1988)CrossRefGoogle Scholar
9 Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T., Lochtefeld, A., J. Appl. Phys., 97, 127 (2005).Google Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *