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Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

Published online by Cambridge University Press:  01 February 2011

Simone Severi
Affiliation:
severis@imec.be, IMEC, SPDT, Kapeldreef 75, Leuven, Belgium, 3001, Belgium, 003216283579
Emmanuel Augendre
Affiliation:
Augendre@imec.be, IMEC, Kapeldreef 75, Heverlee, B-3001, Belgium
Bartek Pawlak
Affiliation:
Pawlak@imec.be, Philips Research Leuven, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Pierre Eyben
Affiliation:
Eyben@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Taiji Noda
Affiliation:
Noda@imec.be, Matsushita Electric Industrial Co., Kyoto, N/A, N/A, Japan
Susan Felch
Affiliation:
Susan_Felch@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Annelies Falepin
Affiliation:
Falepin@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Vijay Parihar
Affiliation:
Vijay_Parihar@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Robert Schreutelkamp
Affiliation:
Robert_Schreutelkamp@amat.com, Applied Materials, Sunnyvale, CA, 94086, United States
Wilfried Vandervorst
Affiliation:
Vandervorst@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
Kristin De Meyer
Affiliation:
Demeyer@imec.be, IMEC, Kapeldreef 75, Heverlee, N/A, B-3001, Belgium
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Abstract

The advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 Lindsay, R. et al., IJWT 2004 Google Scholar
2 Severi, S. et al., IEDM 2004 Google Scholar
3 Shima, A. et al., IEEE Trans. Elect. Dev. 2005 Google Scholar
4 Jain, S. H. et al., IEEE Trans. Elect. Dev. 2005 Google Scholar
5 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.Google Scholar
6 Pawlak, B. J. et al., submitted to Appl. Phys. Lett.Google Scholar
7 kottantharayil, A. et al., VLSI 2004 Google Scholar
8 Chong, Y. F. et al., IEEE Trans. Elect. Dev. 2004 Google Scholar
9 Pawlak, B. J. et al., submitted to MRS 2006 Google Scholar

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Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal
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