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Energy Loss Rates for Light Holes in Ingaas/GaAs Strained-Layer Single Quantum Wells
Published online by Cambridge University Press: 26 February 2011
Abstract
Energy relaxation rates for light holes in InGaAs/GaAs strained layer quantum wells are measured. Two techniques were used to measure light hole temperatures as a function of power dissipated in the hole gas. For Th < 20K, Shubnikov-de Haas oscillations were used and for Th> 20K, a photoluminescence technique was employed.
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- Research Article
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- Copyright © Materials Research Society 1988