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Electronic Properties of III-Nitride Surfaces and Interfaces Studied by Scanning Photoelectron Microscopy and Spectroscopy

Published online by Cambridge University Press:  31 January 2011

Cheng-Tai Kuo
Affiliation:
d933315@oz.nthu.edu.tw, National Tsing-Hua University, Physics, Hsinchu, Taiwan, Province of China
Hong-Mao Lee
Affiliation:
hongmao.li@gmail.com, United States
Chung-Lin Wu
Affiliation:
clwuphys@mail.ncku.edu.tw, National Cheng-Kung University, Physics, Tainan, Taiwan, Province of China
Hung-Wei Shiu
Affiliation:
livelive@gmail.com, National Tsing-Hua University, Physics, Hsinchu, Taiwan, Province of China
Chia-Hao Chen
Affiliation:
chchen@nsrrc.org.tw, National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Province of China
Shangjr Gwo
Affiliation:
shangjr.gwo@scholarone.com, National Tsing-Hua University, Physics, Hsinchu, Taiwan, Province of China
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Abstract

We report on a method based on cross-sectional scanning photoelectron microscopy and spectroscopy (XSPEM/S) for studying electronic structure of III-nitride surfaces and interfaces on a submicrometer scale. Cross-sectional III-nitride surfaces prepared by in situ cleavage were investigated to eliminate the polarization effects associated with the interface charges/dipoles normal to the cleaved surface. In contrast to the as-grown polar surfaces which show strong surface band bending, the cleaved nonpolar surfaces have been found to be under the flat-band conditions. Therefore, both doping and compositional junctions can be directly visualized at the cleaved nonpolar surfaces. Additionally, we show that the “intrinsic” valence band offsets at the cleaved III-nitride heterojunctions can be unambiguously determined.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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