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Electron-Beam-Induced Dissociation of Boron-Deuterium Pairs in Diamond

Published online by Cambridge University Press:  01 February 2011

Julien Barjon
Affiliation:
julien.barjon@cnrs-bellevue.fr, Université de Versailles Saint-Quentin-en-Yvelines, Groupe d'Etude de la Matière Condensée (GEMaC), CNRS, 1 place A. Briand, Meudon, 92195, France
Jacques Chevallier
Affiliation:
jacques.chevallier@crns-bellevue.fr, Université de Versailles Saint-Quentin-en-Yvelines, Groupe d'Etude de la Matière Condensée (GEMaC), CNRS, 1 place A. Briand, Meudon, 92195, France
François Jomard
Affiliation:
francois.jomard@cnrs-bellevue.fr, Université de Versailles Saint-Quentin-en-Yvelines, Groupe d'Etude de la Matière Condensée (GEMaC), CNRS, 1 place A. Briand, Meudon, 92195, France
Céline Baron
Affiliation:
celine.baron@gmail.com, CNRS, Laboratoire d'Etudes des Propriétés Electroniques des Solides (LEPES), BP 166, Grenoble, 38042, France
Alain Deneuville
Affiliation:
deneuville@grenoble.cnrs.fr, CNRS, Laboratoire d'Etudes des Propriétés Electroniques des Solides (LEPES), BP 166, Grenoble, 38042, France
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Abstract

The diffusion of deuterium in boron-doped homoepitaxial diamond films leads to the passivation of boron acceptors via the formation of B-D pairs. In this letter, the stability of these complexes is investigated under the stress of a low-energy (10keV) electron-beam irradiation at low temperature (∼100K). The dissociation of the complexes is evidenced by cathodoluminescence spectroscopy and is shown to result in the reactivation of most acceptors. The dissociation yield per incident electron is found to be strongly dependent on the e-beam current, which suggests a dissociation involving a vibrational excitation of the complexes by hot electrons.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Hess, K., Kizilyalli, I., Lyding, J.W., IEEE Trans. Electron Devices 45, 406 (1998).CrossRefGoogle Scholar
2. Lüdeman, R., Mater. Sci. Eng. B 58, 86 (1999).CrossRefGoogle Scholar
3. Rao, E.V.K., Gottesman, Y., Allovon, M., Theys, B., Sik, H., Slempkes, S., Mater. Sci. Eng. B 66, 50 (1999).CrossRefGoogle Scholar
4. Chevallier, J., Theys, B., Lusson, A., Grattepain, C., Deneuville, A. and Gheeraert, E., Phys. Rev. B 58, 7966 (1998).CrossRefGoogle Scholar
5. Teukam, Z., Chevallier, J., Saguy, C., Kalish, R., Ballutaud, D., Barbé, M., Jomard, F., Tromson-Carli, A., Cytermann, C., Butler, J.E., Bernard, M., Baron, C., Deneuville, A., Nature Materials 2, 482 (2003)CrossRefGoogle Scholar
6. Tajima, M., Appl. Phys. Lett. 32, 719 (1978).CrossRefGoogle Scholar
7. Kawarada, H., Matsuyama, H., Yokota, Y., Sogi, T., Yamaguchi, A., Phys. Rev. B 47, 3633 (1993).CrossRefGoogle Scholar
8. Sauer, R. in Semiconductors and Semimetals (Academic press, Amsterdam, 2004) Vol. 77, Chap. 8, pp. 379452.Google Scholar
9. Teukam, Z., Ph.D thesis, Université de Versailles St-Quentin-en-Yvelines (2004).Google Scholar
10. Amano, H., Kito, M., Hiramatsu, K., Akasaki, I., Jap. J. Appl. Phys. 28, L2112 (1989).CrossRefGoogle Scholar
11. Seager, C. H., Myers, S. M., Vaandrager, B., Nelson, J. S., Appl. Phys. Lett. 80, 2693 (2002).CrossRefGoogle Scholar
12. Silvestre, S., Bernard-Loridant, D., Constant, E., Constant, M., Chevallier, J., Appl. Phys.Lett. 77, 3206 (2000).CrossRefGoogle Scholar
13. Shen, T.-C., Wang, C., Abeln, G. C., Tucker, J. R., Lyding, J. W., Avouris, Ph., Science 268, 1590 (1995).CrossRefGoogle Scholar
14. Foley, E.T., Kam, A.F., Lyding, J.W., Avouris, Ph., Phys. Rev. Lett. 80, 1336 (1998).CrossRefGoogle Scholar
15. Chevallier, J., Barbé, M., Constant, E., Loridant-Bernard, D. and Constant, M., Appl. Phys.Lett. 75, 112 (1999).CrossRefGoogle Scholar
16. Ballutaud, D., Jomard, F., Duigou, J. Le, Theys, B., Chevallier, J., Deneuville, A., Pruvost, F., Diamond Relat. Mater. 9, 1171 (2000).CrossRefGoogle Scholar
17. Sun, B., Shi, G. A., Rao, S. V. S. Nageswara, Stavola, M., Tolk, N. H., Dixit, S. K., Feldman, L. C., and Lüpke, G., Phys. Rev. Lett. 96, 35501 (2006).10.1103/PhysRevLett.96.035501CrossRefGoogle Scholar