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Electron Beam Induced Current Imaging of Ferroelectric Thin Films

Published online by Cambridge University Press:  10 February 2011

Igor Lubomirsky
Affiliation:
University of California, Los Angeles
Tzu Yu Wang
Affiliation:
University of California, Los Angeles
Konstantin Gartsman
Affiliation:
Weizmann Insitute of Science, Rehovot, Israel
Oscar M. Stafsudd
Affiliation:
University of California, Los Angeles
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Abstract

We have observed Electron Beam Induced Current imaging of thin film ferroelectrics. The Electron beam irradiation of a thin ferroelectric film creates a local temperature gradient that induces a polarization gradient and therefore a local electric field. Although the temperature difference is small the gradient is on the order of thousands K/cm and results in a corresponding electric field of a few MV/cm. The thermally induced electric field drives the electron beam created carriers toward an electrode thus inducing an externally measurable current. Despite the very small carrier life time (<1 ns) in ferroelectrics, the induced electric field is strong enough to collect carriers from a few hundred nm depth before recombination. An EBIC gain of 5 to 20 was measured experimentally with BaTiO3 and LiTaO3 films on silicon substrates. This method is insensitive to charge traps and provides a resolution better than 1 μm.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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