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Electroluminescent devices based on Er-doped Si nanoclusters

Published online by Cambridge University Press:  11 February 2011

F. Priolo
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64,I-95123
F. Iacona
Affiliation:
Catania, Italy; CNR-IMM, Sezione di Catania, Stradale Primosole 50, I-95121 Catania, Italy;
D. Pacifici
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64,I-95123
A. Irrera
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64,I-95123
M. Miritello
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64,I-95123
G. Franzò
Affiliation:
INFM and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64,I-95123
D. Sanfilippo
Affiliation:
STMicroelectronics, Stradale Primosole 50,-95121 Catania, Italy
P.G. Fallica
Affiliation:
STMicroelectronics, Stradale Primosole 50,-95121 Catania, Italy
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Abstract

The electroluminescence (EL) properties of Er-doped Si nanoclusters (nc) embedded in metal-oxide-semiconductor devices are investigated. It is shown that, due to the presence of Si nc dispersed in the SiO2 matrix, an efficient carrier injection occurs and Er is excited producing an intense 1.54 μm room temperature luminescence. The EL properties as a function of the current density, temperature and time have been studied in details, elucidating the radiative and non-radiative de-excitation properties of the system. We have also estimated the excitation cross section for Er under electrical pumping finding a value of −1×10 cm. This value is two orders of magnitude higher than the effective excitation cross section of Er ions through Si nc under optical pumping, and quantum efficiencies of ∼1% are obtained at room temperature in these devices. These data will be presented and the impact on future applications discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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Electroluminescent devices based on Er-doped Si nanoclusters
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