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Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

Published online by Cambridge University Press:  29 August 2012

XinYi Chen
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Alan M. C. Ng
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Aleksandra B. Djurišić
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Chi Chung Ling
Affiliation:
Department of Physics, The University of Hong Kong, Hong Kong, P. R. China
Wai-Kin Chan
Affiliation:
Department of Chemistry, The University of Hong Kong, Hong Kong, P. R. China
Wai Keung Fong
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
Hsian Fei Lui
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
Charles Surya
Affiliation:
Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China
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Abstract

Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

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Copyright
Copyright © Materials Research Society 2012

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Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes
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