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Electrochemical Deposition of Metals on Semiconductors

Published online by Cambridge University Press:  10 February 2011

Gerko Oskam
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, gerko@jhunix.hcf.jhu.edu
John G. Long
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, gerko@jhunix.hcf.jhu.edu
Maria Nikolova
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, gerko@jhunix.hcf.jhu.edu
Peter C. Searson
Affiliation:
Department of Materials Science and Engineering, The Johns Hopkins University Baltimore, MD 21218, gerko@jhunix.hcf.jhu.edu
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Abstract

The general concepts governing the electrochemical deposition of metal films on semiconductors are discussed, and recent results on the fabrication of Schottky junctions consisting of silicon electrodeposited with platinum, copper and gold are presented. In order to obtain good adherent metal films, the density of nuclei should be high and the films should be grown at low current densities where the charge transfer process is rate limiting. This situation can be realized using potential controlled electrochemical deposition. For metal deposition on silicon, the surface should be pretreated in HF to dissolve the oxide layer. Furthermore, the surface should be stable during deposition which can be achieved by tailoring the deposition solutions and by using electrochemical deposition at negative potentials. It is shown that by using this approach, n-type silicon / Pt, Au, and Cu Schottky junctions can be fabricated of a quality comparable to that of junctions prepared by sputter and vapor deposition techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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