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Electrically-controlled Resistance Switching Accompanied by Ultra-high-J Domains of VO2 Films

Published online by Cambridge University Press:  31 January 2011

Joe Sakai*
Affiliation:, Univ. F. Rabelais, Laboratoire LEMA, Parc de Grandmont, Tours, 37200, France
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The electric-field-induced resistance switching (EIRS) phenomenon on a VO2 planar-type junction fabricated on a Al2O3 (0001) substrate was studied by performing current-voltage (I-V) measurement and optical microscope observation simultaneously. It was confirmed that current density J of the low-resistance-state (LRS) region is maintained constant at approximately 1.6 × 106 A/cm2, while the volume of the LRS region was changed according to the current. A survey of the previous I-V traces on EIRS of VO2 revealed that almost all the junctions so far had shown non-zero V-intercepts, which are attributed to the volume change of the LRS regions. The maintenance of high-J in the LRS region is considered to be related to the electrically-induced metallic phase mechanism reported in perovskite-type manganites.

Research Article
Copyright © Materials Research Society 2009

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1 Bongers, P. F. and Enz, U., Philips Res. Rep. 21, 387 (1966).Google Scholar
2 Steensel, K. van, Burg, F. van de, and Kooy, C., Philips Res. Rep. 22, 170 (1967).Google Scholar
3 Kim, H. T., Chae, B. G., Youn, D. H., Kim, G., Kang, K. Y., Lee, S. J., Kim, K., and Lim, Y. S., Appl. Phys. Lett. 86, 242101 (2005).Google Scholar
4 Dumas-Bouchiat, F., Champeaux, C., Catherinot, A., Crunteanu, A., and Blondy, P., Appl. Phys. Lett. 91, 223505 (2007).Google Scholar
5 Sakai, J., J. Appl. Phys. 103, 103708 (2008).Google Scholar
6 Mansingh, A. and Singh, R., J. Phys. C 13, 5725 (1980); and references therein.Google Scholar
7 Morin, F. J., Phys. Rev. Lett. 3, 34 (1959).Google Scholar
8 Stefanovich, G., Pergament, A., and Stefanovich, D., J. Phys.: Condens. Matter 12, 8837 (2000).Google Scholar
9 Sakai, J. and Kurisu, M., Phys. Rev. B 78, 033106 (2008).Google Scholar
10 Berglund, C. N. and Walden, R. H., IEEE. Trans. Electron Devices 17, 137 (1970).Google Scholar
11 Duchene, J. C., Terraillon, M. M., Pailly, M., and Adam, G. B., IEEE. Trans. Electron Devices 18, 1151 (1971).Google Scholar
12 Okimura, K., Ezreena, N., Sasakawa, Y., and Sakai, J., Jpn. J. Appl. Phys. 48, (2009) (in press).Google Scholar
13 Takubo, N. and Miyano, K., Phys. Rev. B 76, 184445 (2007).Google Scholar
14 Urushibara, A., Moritomo, Y., Arima, T., Asamitsu, A., Kido, G., and Tokura, Y., Phys. Rev. B 51, 14103 (1995).Google Scholar