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Electrical Properties Of Thin Polyimide Films Prepared By Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  15 February 2011

Hyung-Jin Jung
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Dong-Heon Lee
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Jeon-Kook Lee
Affiliation:
Korea Institute of Science and Technology, Division of Ceramics, Seoul, Korea
Chung-Nam Whang
Affiliation:
Yonsei University, Physics Department, Seoul, Korea
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Abstract

The electrical properties of gold – polyimide - silicon structures were investigated experimentally by capacitance – voltage (C – V) measurement. Polyimide films were deposited on silicon substrate by using ionized cluster beam deposition (ICBD) of PMDA-ODA followed by in-situ thermal curing in N2 atmosphere. The resulting C – V plots show hysteresis, and it was believed to be due to the injection of carriers. The interface trap density is fairly low because of the clean interface provided by ICB technique.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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