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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Published online by Cambridge University Press:  15 July 2014

Luana S. Araujo
Affiliation:
NanO LaB-Departamento de Física, Universidade Federal de São Carlos, SãoCarlos, São Paulo, Brazil.
Olivia Berengue
Affiliation:
Faculdade de Engenharia de Guaratinguetá, Universidade Estadual Júlio de Mesquita Filho , Guaratinguetá , São Paulo, Brazil.
Maurício Baldan
Affiliation:
Laboratório Associado de Sensores e Materiais, LAS/INPE, São José dos Campos, São Paulo, Brazil.
Neidenei Ferreira
Affiliation:
Laboratório Associado de Sensores e Materiais, LAS/INPE, São José dos Campos, São Paulo, Brazil.
João Moro
Affiliation:
Instituto Federal de Educação, Ciência e Tecnologia de São Paulo, Bragança Paulista, São Paulo, Brazil.
Adenilson Chiquito
Affiliation:
NanO LaB-Departamento de Física, Universidade Federal de São Carlos, SãoCarlos, São Paulo, Brazil.
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Abstract

Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.

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Copyright
Copyright © Materials Research Society 2014 

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