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Efficient silicon light emitting diodes made by dislocation engineering

Published online by Cambridge University Press:  01 February 2011

M. A. Lourenço
Affiliation:
School of Electronics, Computing and Mathematics,
R. M. Gwilliam
Affiliation:
School of Electronics, Computing and Mathematics,
G. Shao
Affiliation:
School of Engineering, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
K.P. Homewood
Affiliation:
School of Electronics, Computing and Mathematics,
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Abstract

Efficient room temperature silicon based light emitting diodes have been fabricated by conventional ULSI processes using a recently developed dislocation engineering approach. Strong silicon band edge luminescence was observed from devices fabricated by low energy boron implantation into silicon substrates followed by high temperature rapid thermal annealing. In this paper we review the luminescence properties of silicon light emitting diodes and give an example of how this approach can be employed to fabricate and optimise light emitting devices operating at different wavelengths.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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4. Lourenço, M. A., Butler, T. M., Kewell, A. K., Gwilliam, R. M., Kirkby, K. J. and Homewood, K. P., Jpn. J. Appl. Phys. 40, 4041 (2001)CrossRefGoogle Scholar
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6. Lourenço, M. A., Ng, Wai Lek, Shao, G., Gwilliam, R. M. and Homewood, K. P., Proceedings of SPIE 4654, 138 (2002)CrossRefGoogle Scholar

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