Hostname: page-component-5db6c4db9b-wnbrb Total loading time: 0 Render date: 2023-03-23T21:42:20.338Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Effects of various annealing temperature on carbon nanotubes for N2 detection

Published online by Cambridge University Press:  01 February 2011

Chien-Sheng Huang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Bohr-Ran Huang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Yung-Huang Jang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Chih-Fu Hsieh
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Chia-Ching Wu
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Min-Chao Chen
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Kun-Lin Yang
Affiliation:
Department and Institute Electronic Engineering, National Yunlin University of Science and Technology, Taiwan, ROC
Get access

Abstract

The vertically aligned carbon nanotubes (CNTs) deposited by microwave plasma-enhanced chemical vapor deposition (MPCVD) were utilized as resistive gas sensors.

The carbon nanotubes were annealed between 200 to 800°C under N2 flow (500 sccm) for 15 minute, respectively. After that, the carbon nanotubes were exposed to an N2 filling and pumping environment. Upon exposure to N2 the electrical resistance of vertically aligned carbon nanotubes was found to increase. It was found that the N2 absorption of unannealed carbon nanotubes was reversible, whereas which of annealing ones was not. However, the sensitivity of the N2 absorption on carbon nanotubes was improved after annealing. From the Raman spectra, the ID/IG ratio of carbon nanotubes also decreased after annealing, indicating that more graphenes were formed by the annealing process. Furthermore, from X-ray photoelectron spectroscopy (XPS), it was observed that the ratio of the oxygen to carbon (O/C) signal intensity increased from 0.094 to 3.943 as the annealing temperature increased. As a consequence, it was suggested that the surface of carbon nanotubes was oxygenated and the absorption of N2 changed from physisorption to chemisorption.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Iijima, S., Nature 354 (1991) 56.CrossRefGoogle Scholar
[2] de Heer, W. A., Chatelain, A., and Ugarte, D., Science 270 (1995) 1179.CrossRefGoogle Scholar
[3] Hafner, J., Cheung, C., Lieber, C., Nature 398 (1999) 761.CrossRefGoogle Scholar
[4] Liu, C., Fan, Y.Y., Liu, M., Cong, H.T., Cheng, H.M., Dresselhaus, M.S., Science 286 (1999) 1127.CrossRefGoogle Scholar
[5] Tans, S.J., Devoret, M.H., Dai, H., Thess, A., Smalley, R.E., Geerligs, L.J., Dekker, C., Nature 386 (1997) 474.CrossRefGoogle Scholar
[6] Rueckes, T., Kim, K., Joselevich, E., Tseng, G. Y., Cheung, C., and Lieber, C. M., Science 289 (2000) 94.CrossRefGoogle Scholar
[7] Wei, Bee-Yu, Hsu, Ming-Chih, Su, Pi-Guey, Lin, Hong-Ming, Wu, Ren-Jang, Lai, Hong-Jen, Sensors and Actuators B 101 (2004) 81.CrossRefGoogle Scholar
[8] Valentini, L., Cantalini, C., Armentano, I., Kenny, J.M., Lozzi, L., Santucci, S., Diamond and Related Materials 13 (2004) 1301.CrossRefGoogle Scholar
[9] Wang, S.G., Zhang, Qing, Yang, D.J., Sellin, P.J., Zhong, G.F., Diamond and Related Materials 13 (2004) 1327.CrossRefGoogle Scholar
[10] Saito, R., Dresselhaus, G., M.S. Dresselhaus, Imperial College Press, London (1998).Google Scholar
[11] Tan, P.H., Hu, C.Y., Li, F., Bai, S., Hou, P.X., Cheng, H.M., Carbon 40 (2002) 1131.CrossRefGoogle Scholar
[12] Corrias, M., Serp, Ph., Kalck, Ph., Dechambre, G., Lacout, J.L., Castiglioni, C., Kihn, Y., Carbon 41 (2003) 2361.CrossRefGoogle Scholar
[13] Zhao, X, Ando, Y. Jpn J Appl Phys. 37 (1998) 4846.CrossRefGoogle Scholar
[14] Gao, J.S., Umeda, K., Uchino, K., Nakashima, H., Muraoka, K., Materials Science and Engineering A 352 (2003) 308.CrossRefGoogle Scholar
[15] Varghese, O. K., Kichambare, P. D., Gong, D., Ong, K. G., Dickey, E. C., Grimes, C. A., Sens. Actuators B 81 (2001) 32.CrossRefGoogle Scholar
[16] Goldoni, A., Petaccia, L., Lizzit, S., Larciprete, R., ELETTRA Highlights, (20022003) 57.Google Scholar
[17] Tharigen, T., Lippold, G., Riede, V., Lorenz, M., Koivusaari, K. J., Lorenz, D., Mosch, S., Grau, P, Hesse, R., Thin Solid Film, 348 (1999) 103.CrossRefGoogle Scholar
[18] Moncoffre, N., Hollinger, G., Jaffrezic, H., Marest, G., Tousset, J.. Nuclear Instruments and Methods in Physics Research B 7/8, (1985) 177.CrossRefGoogle Scholar
[19] Coutures, J.P., Erre, R., Massiot, D., Lanron, C., Billard, D., Peraudeau, G., Radiation Effects 98 (1986) 83.CrossRefGoogle Scholar
[20] Goldoni, A., Larciprete, R., Petaccia, L., Lizzit, S., J. Am. Chem. Soc. 125 (2003) 11329.CrossRefGoogle Scholar
[21] Villalpando-Pàez, F., Romero, A.H., Muñoz-Sandoval, E., Martínez, L.M., Terrones, H., Terrones, M., Chemical Physics Letters 386 (2004) 137.CrossRefGoogle Scholar