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Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

Published online by Cambridge University Press:  15 February 2011

Christos Papavassiliou
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
G. Constantinidis
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
N. Kornilios
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
A. Georgakilas
Affiliation:
Foundation For Research and Technology- Hellas (FORTH), Heraklion, Greece
E. LÖchterman
Affiliation:
Freiberger Elektronikwerkstoffe GmbH, Freiberg/Sachsen, Germany
P. Panayotatos
Affiliation:
Rutgers U., Piscataway, NJ
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Abstract

A systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Fischer, R.J., Chand, N., Kopp, W.F., Peng, C.-K, Morkoç, H., Gleason, K.R. and Schleitlin, D., IEEE-TED 33, 206 (1986)CrossRefGoogle Scholar
2. Ren, F., Chand, N., Gabrinski, P., Pearton, S.J., Wu, C.S., Urbanek, L.D., Fullowan, T., Shah, N. and Feuer, M.D., Electron. Lett. 24, 1037 (1988)CrossRefGoogle Scholar
3. Georgakilas, A., Panayotatos, P., Stoemenos, J., Mourrain, J.-L. and Christou, A., J. Appl. Phys. 71, 2679 (1992).CrossRefGoogle Scholar
4. Georgakilas, A., Stoemenos, J., Tsagaraki, K., Komninou, Ph., Flevaris, N., Panayotatos, P. and Christou, A., J. Material. Res. 8, 1908 (1993).CrossRefGoogle Scholar
5. Georgakilas, A., Halkias, G., Christou, A., Papavassiliou, C., Perantinos, G., Constantinidis, G. and Panayotatos, P., IEEE TED 40, 507 (1993).CrossRefGoogle Scholar
6. Löchterman, E., Krasny, H., ESPRIT 9500#19, PPR 2, 1993 Google Scholar
7. Ottsuka, N., Choi, C., Nakamura, Y., Nagakura, S., Fischer, R., Peng, C.K. and Morkoç, H., Appl. Phys. Lett. 49, 277 (1986)CrossRefGoogle Scholar
8. Dambrine, G., Cappy, A., Heliodore, F. and Playez, Edouard, IEEE-MTT 36, 1151 (1988)CrossRefGoogle Scholar
9. Homak, L.A., Tewksbury, S.K. and Nariman, H. E., presented at the 1993 SPIE Conference on Optoelctronics Interconnects Los Angeles CA. (Proceedings series vol. 1849, #10)Google Scholar

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Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets
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