No CrossRef data available.
Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures
Published online by Cambridge University Press: 01 February 2011
In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C4.2
- Copyright © Materials Research Society 2003