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Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering

Published online by Cambridge University Press:  25 February 2011

A.H. Benhocine
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS. Université Paris XI - Brit.220 - 91405 ORSAY CEDEX, France
F. Meyer
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS. Université Paris XI - Brit.220 - 91405 ORSAY CEDEX, France
M. Eizenberg
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS. Université Paris XI - Brit.220 - 91405 ORSAY CEDEX, France
D. Bouchier
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS. Université Paris XI - Brit.220 - 91405 ORSAY CEDEX, France
S. Kianfar
Affiliation:
Institut d'Electronique Fondamentale d'Orsay. U.R.A. D0022 CNRS. Université Paris XI - Brit.220 - 91405 ORSAY CEDEX, France
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Abstract

WN films were deposited on clean Si substrates by Reactive Ion Beam Sputtering in a UHV system. The growth mode of the films as a function of the nitrogen ion energy was investigated by in situ Auger Electron Spectrometry. The energy of the incident ions was varied from 250 eV to 3 keV. We observed a significant nitridation of the silicon at the very beginning of the deposition. This nitridation is more pronounced for the lower energy and is more reduced for 2 keV-ions. It seems to follow the trend of the film composition: 250 eV-ions and 2 keV-ions result in N-rich films (N/W≈1) and W-rich films (N/W≈0.5), respectively. All these results are discussed in terms of sputtering yield, backscattering and sticking coefficient and are explained by taking into account: first, the interaction between the incident ions and the target, and second, the interaction between the species emitted by the target and the growing film.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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Effects of Nitrogen Ion Energy on the Growth Mode of WN Films Deposited by Reactive Ion Beam Sputtering
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