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Effects of Material Properties in Amorphous Silicon Color Detectors

Published online by Cambridge University Press:  15 February 2011

D. Caputo ,
L. Colalongo ,
F. Irrera ,
F. Lemmi ,
F. Palma  and
M. Tucci
D. Caputo
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
L. Colalongo
Affiliation:
Department of Electronic I.S., University of Bologna, Piazza Risorgimento, Bologna, Italy
F. Irrera
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
F. Lemmi
Affiliation:
Xerox Parc, Palo Alto (CA)
F. Palma
Affiliation:
Dept. of Electronic Engineering, University of Rome “La Sapienza”, via Eudossiana 18, 00184 Roma, Italy
M. Tucci
Affiliation:
ENEA, Research Centre, Località Granatello, 80055, Portici, Napoli, Italy
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Abstract

In this work we study the effects of material properties on the reading process of color detectors by using a two dimensional simulator for the transient regime. In particular, starting from the potential and charge distribution in the device, we describe effects of the density of defects on the self-bias process. Results show the possibility to engineer materials in order to optimize response speed of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 845
Copyright
Copyright © Materials Research Society 1999

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