Skip to main content Accessibility help
×
Home
Hostname: page-component-79b67bcb76-vkbph Total loading time: 0.209 Render date: 2021-05-15T12:19:28.564Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true }

Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

Jin Jang
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Tae Gon Kim
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Song Ok Koh
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Hyon Kyun Song
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Kyu Chang Park
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Moon Hyun Chung
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics and Research Institute for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 130–701, Korea: JUNG HEA KWON AND JUN DONG KIM, Daewoo Electronics Co Ltd., Inchon, Korea
Get access

Abstract

We studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Shimizu, I., Hanna, J. and Shirai, H., Mat. Res. Soc. Symp. Proc. 192, 64(1990).CrossRefGoogle Scholar
2. Shirai, H.. Das, D., Hanna, J. and Shimizu, I., in Technical Digest of the International PVSEC-5 (Kyoto, Japan, 1990).Google Scholar
3. Das, D., Shirai, H., Hanna, J. and Shimizu, I., Jpn. J. Appl. Phys. 30, L239(1991).CrossRefGoogle Scholar
4. Shirai, H., Hanna, J. and Shimizu, I., To be published.Google Scholar
5. Asano, A., Appl. Phys. Lett. 56, 533(1990).CrossRefGoogle Scholar
6. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett. 33, 81(1978).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *