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Effects of Electrode Spacing and Hydrogen Dilution on a-SiC:H and a-Si:H Layers

Published online by Cambridge University Press:  01 January 1993

J. Daey Ouwens
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
R.E.I. Schropp
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
C.H.M. Van Der Werf
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
M.B. Von Der Linden
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
C.H.M. Maree
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
W.F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
P. Rava
Affiliation:
Elettrorava S.p.A., Savonera Torino, Italy
F. Demichelis
Affiliation:
Dipartimento di Fisica Politecnico, Torino, Italy
C.F. Pirri
Affiliation:
Dipartimento di Fisica Politecnico, Torino, Italy
E. Tresso
Affiliation:
Dipartimento di Fisica Politecnico, Torino, Italy
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Abstract

A series of hydrogenated amorphous silicon carbide (a-Si1–xCx:H) films was deposited by rf glow discharge deposition using various pressures, electrode spacings and hydrogen dilution ratios. We found that improvement of the structure by hydrogen dilution is more effective when a large electrode spacing is applied. In the case of undiluted a-SiC:H, the product of pressure and electrode spacing appears to be the important parameter. Dilution causes an increase of the photoconductivity. The band gap decreases but increases again for highly diluted samples. A striking result is that the Fourier transform infra-red spectroscopy (FTIR) bands assigned to CHX and SiHx increase upon dilution when a small electrode spacing is applied, although the hydrogen content is reduced. It is shown that this is due to an increase of the density of the films and to an increase of the amount of carbon built into the bulk instead of into voids. The combination of decreasing hydrogen content, void fraction and increasing amount of carbon atoms into the bulk explains the behaviour of the photoconductivity and band gap as a function of H2 dilution.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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Effects of Electrode Spacing and Hydrogen Dilution on a-SiC:H and a-Si:H Layers
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