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Effect of Varying Dwell Time During Non-melt Laser Annealing of Boron Implanted Silicon

Published online by Cambridge University Press:  01 February 2011

Daniel Zeenberg
Affiliation:
dzgator@ufl.edu, University of Florida, Material Science and Engineering, 509 Engineering Building, PO Box 116130, Gainesville, FL, 32611-6130, United States
Kevin S Jones
Affiliation:
kjones@eng.ufl.edu, University of Florida, Material Science and Engineering, Gainesville, FL, 32611, United States
Susan B Felch
Affiliation:
susan_felch@amat.com, Applied Materials Inc., Front End Products Group, Sunnyvale, CA, 94085, United States
Vijay Parihar
Affiliation:
vijay_parihar@amat.com, Applied Materials Inc., Front End Products Group, Sunnyvale, CA, 94085, United States
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Abstract

As the fabrication for the CMOS technology trends to decreasing the size of transistors for the benefit of increased performance and device density, the implant and annealing process technologies are being forced to meet increasingly challenging demands for ultra-shallow junctions. As the current annealing preferences shift from rapid thermal annealing toward sub-second RTP technologies such as flash and laser annealing, the dynamics of micro-structural evolution on the order of milliseconds and microseconds become of increasing importance. To investigate the kinetics in this ultra-fast annealing regime, this study investigated the effect of varying the temperature and time of a scanning laser anneal in the millisecond and microsecond timeframe. Amorphous layers were created in silicon substrates using a 30 keV silicon implant at a dose of 1x1015 ions/cm3. These wafers were then processed using a scanning continuous wave near infra-red laser at varying temperatures and scan rates in order to vary the dwell time of each condition. A combination of sheet resistance, optical interferometry, and secondary ion mass spectrometry characterization techniques were used in order to investigate the activation and diffusion of these laser annealed samples. The regrowth temperature across all samples showed a positive correlation to the sheet resistance; trending toward lower values as temperatures increased. Dwell time, however, showed an inverse effect at lower temperatures. The microsecond anneal at 1200 °C showed a lower Rs than the millisecond anneal, while at higher temperatures the trend reversed. This trending shows an obvious competition between activation and diffusion mechanisms and their dependence on regrowth temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

1 International Technology Roadmap for Semiconductors 2003, Semiconductor Industry Association, San Jose, CA (2003). (http://public.itrs.net)Google Scholar
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Effect of Varying Dwell Time During Non-melt Laser Annealing of Boron Implanted Silicon
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