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Effect of TiN Anneal Ambient on The Microstructure and Electromigration Performance Of Al-Based Alloys

Published online by Cambridge University Press:  21 February 2011

J. Olufemi Olowolafe
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Tx 78721
Charles Lee
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Tx 78721
Hisao Kawasaki
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Tx 78721
Carol Gelatos
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Tx 78721
Roc Blumenthal
Affiliation:
Advanced Products Research and Development Laboratory, Motorola, 3501 Ed Bluestein Blvd., Austin, Tx 78721
N. David Theodore
Affiliation:
Advanced Custom Technologies, Motorola, 2200 West Broadway Rd., Mesa, AZ 85202
R. B. Gregory
Affiliation:
Advanced Custom Technologies, Motorola, 2200 West Broadway Rd., Mesa, AZ 85202
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Abstract

A strong correlation has been established between TiN substrate anneal ambient and electromigration performance of Al-based alloys. Excellent electromigration lifetimes were measured for AlSiCu (and AlCu) films on sputtered TiN substrates annealed in N2 and slowly cooled down in furnace. The films annealed in N2-O2 and N2-H2 showed poorer electromigration performance, in that order. Stronger Al (111) texture, larger median grain size and uniform grain size distribution have been responsible for the improved electromigration performance of the N2-annealed (furnace-cooled) films. On the contrary, Al alloy films on TiN substrates annealed in N2 (but air-cooled), N2-O2, or N2-H2 ambient showed weaker Al (111) textures and smaller median grain sizes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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