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Effect of thermal annealing on the performance of polysilane based organic light emitting diode

Published online by Cambridge University Press:  01 February 2011

Ranbir Singh
Affiliation:
ranbir@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, WL-106, Kanpur, 208016, India
Monica Katiyar
Affiliation:
mk@iitk.ac.in, Indian Institute of Technology Kanpur, Department of Materials and Metallurgical Engineering, Kanpur, 208016, India
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Abstract

Polysilanes, being ó bonded, are promising materials for emission in ultraviolet/near ultraviolet (UV/NUV) region and exhibit adequate charge mobility for fabricating practical devices. This study contributes to the understanding of the effects of thermal annealing on the performance of organic light-emitting diodes (OLEDs) made of poly (n-butylphenyl-silane) (PS-4). OLEDs having indium tin oxide (ITO)/poly (3, 4-ethylenedioxythiophene) poly (styrenesulfonate) PEDOT: PSS/poly (n-butylphenylsilane) (PS-4)/lithium fluoride (LiF)/Al device structure were fabricated. PS-4 is spin coated and annealed for one hour at different temperatures (90-120°C). EL Spectra from these devices consists of white emission along with the UV peak. Current density-voltage (J-V), photoluminescence (PL) and electroluminescence (EL) spectra are also measured. White emission is significantly suppressed when PS-4 is annealed at higher temperature and threshold voltage is lowest at 110°C annealing temperature. This is correlated with PL emission and structural properties of PS-4 films. Surface morphology of PS-4 was measured using atomic force microscopy (AFM). The results are explained in terms of effect of annealing of polymer films on interchain interactions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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Effect of thermal annealing on the performance of polysilane based organic light emitting diode
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