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The Effect of the Oxide Interface on the Material and Electrical Properties of Polysilicon Contacts
Published online by Cambridge University Press: 26 February 2011
Abstract
A strong correlation has been found between the electrical, compositional and structural properties of the polysilicon contact and its interface with the heavily doped pol isi 1-emitter of a transistor. The integrity and thickness of the oxide interface is a major factor for improving the observed performance. Transistors for which the polysilicon was also the diffusion source for the emitter were studied.
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- Copyright © Materials Research Society 1986