Effect of Substrate Temperature on Hardness and Transparency of SiOC(–H) Thin Films Synthesized by Atmospheric Pressure Plasma Enhanced CVD Method
Published online by Cambridge University Press: 29 July 2011
Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(–H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a07-05
- Copyright © Materials Research Society 2011