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Effect of Substrate Temperature on Hardness and Transparency of SiOC(–H) Thin Films Synthesized by Atmospheric Pressure Plasma Enhanced CVD Method

Published online by Cambridge University Press:  29 July 2011

Mayui Noborisaka ,
So Nagashima ,
Hidetaka Hayashi ,
Naoharu Ueda ,
Kyoko Kumagai ,
Akira Shirakura  and
Tetsuya Suzuki
Mayui Noborisaka
Affiliation:
Center for Science of Environment, Resources and Energy, Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
So Nagashima
Affiliation:
Center for Science of Environment, Resources and Energy, Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
Hidetaka Hayashi
Affiliation:
Research and Development Center, Toyota industries Co., Japan, 8, Chaya, Kyowa-cho, Obu-shi, Aichi 474-8601, Japan
Naoharu Ueda
Affiliation:
Research and Development Center, Toyota industries Co., Japan, 8, Chaya, Kyowa-cho, Obu-shi, Aichi 474-8601, Japan
Kyoko Kumagai
Affiliation:
Research and Development Center, Toyota industries Co., Japan, 8, Chaya, Kyowa-cho, Obu-shi, Aichi 474-8601, Japan
Akira Shirakura
Affiliation:
Kanagawa Academy of Science and Technology, 3-2-1 Sakado, Takatsu-ku, Kawasaki 213-0012, Japan
Tetsuya Suzuki
Affiliation:
Center for Science of Environment, Resources and Energy, Graduate School of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
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Abstract

Silicon-based films have gained much interest as protective coatings for transparent polymeric materials. In this study, SiOC(–H) thin films were deposited on polycarbonate (PC) or Si substrates from trimethylsilane (TrMS) gas diluted with He gas by atmospheric pressure plasma enhanced CVD (AP-PECVD) method with varying substrate temperature, and transparency and hardness of the films were investigated. The films exhibited a good optical transparency with an optical transmittance of about 90% irrespective of the substrate temperature, and the hardness increased from 0.6 to 1.3 GPa as the substrate temperature increased from 60 to 140°C. The results are discussed in terms of chemical structural changes in the films according to the substrate temperature.

Keywords

plasma-enhanced CVD (PECVD) (deposition)hardnessthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a07-05
Copyright
Copyright © Materials Research Society 2011

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