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Effect of Silicon Surface Treatments on Thin Silicon Nitride Growth

Published online by Cambridge University Press:  22 February 2011

Makoto Nakamura
Affiliation:
FUJITSU LIMITED Basic Process Development Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 JAPAN
Yoshio Kikuchi
Affiliation:
FUJITSU LIMITED Basic Process Development Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 JAPAN
Masahiro Kuwamura
Affiliation:
FUJITSU LIMITED Basic Process Development Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 JAPAN
Masamichi Yoshida
Affiliation:
FUJITSU LIMITED Basic Process Development Division, 1015 Kamikodanaka, Nakahara-ku, Kawasaki, 211 JAPAN
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Abstract

Ultra thin silicon nitride films have been indispensable in high density memory devices as a dielectric. We investigated the effect of the silicon surface state on initial silicon nitride growth process, we have used X-ray Photoelectron spectrometry (XPS), Secondary ion mass spectrometry(SIMS), and Capacitance-Voltage(C-V) characteristics. The results of our study show that the fluorine on silicon surface influences initial silicon nitride growth. The presence of fluorine delays low pressure chemical vapor deposition(LPCVD) silicon nitride growth as well as restraining native oxide growth at the silicon nitride/silicon substrate interface. We propose that it is a key process of thin dielectric films deposition to control fluorine on silicon surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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