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The Effect of Plasma Treatment on the SiO2 film fabricated without Substrate Heating for Flexible Electronics

Published online by Cambridge University Press:  01 February 2011

Sun-Jae Kim
Affiliation:
sjglory@emlab.snu.ac.kr, Seoul National University, School of electrical engineering, 130-305, Seoul National University, Kwanak-Gu, Seoul, N/A, Korea, Republic of, 82-2-880-7992, 82-2-871-7992
Sang-Myeon Han
Affiliation:
smhan0@gmail.com, Samsung electronics, Asan, N/A, Korea, Republic of
Seung-Hee Kuk
Affiliation:
milleft@emlab.snu.ac.kr, Seoul National University, Seoul, N/A, Korea, Republic of
Dong-Won Kang
Affiliation:
kangdwn@emlab.snu.ac.kr, Seoul National University, Seoul, N/A, Korea, Republic of
Min-Koo Han
Affiliation:
mkh@snu.ac.kr, Seoul National University, Seoul, N/A, Korea, Republic of
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Abstract

Silicon dioxide (SiO2) films were deposited on crystalline silicon substrate by inductively coupled plasma chemical vapor deposition (ICP-CVD). In this paper, various process parameter-gas flow rate, ICP RF power, Process pressure were discussed for the investigation of refractive index. And some properties of the SiO2 film are investigated. Since there was no external substrate heating during the deposition, the SiO2 film showed poor electrical characteristics, such as shifted flat-band voltage and high effective charge density. We have proposed He plasma pre-treatment in order to reduce the interface fixed charge and some post-treatment. Our experimental results shows that He plasma pre-treatment supply thermal energy for decomposition of reactant gas and to remove effective charges. Hydrogen post-treatment also enhances electrical characteristics. We measured the effect of the plasma treatment using FT-IR spectrum and C-V characteristics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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