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Effect of Planar Fault Energies on Dislocation Core Structures and Mobilities in L10 Compounds

Published online by Cambridge University Press:  01 January 1992

J.P. Simmons
Affiliation:
NRC Research Associate, Wright Laboratory, WL/MLLM, Wright-Patterson AFB, OH 45433
S.I. Rao
Affiliation:
Universal Energy Systems, Inc., Dayton, OH 45432
D.M. Dimiduk
Affiliation:
Wright Laboratory, WL/MLLM, Wright-Patterson AFB, OH 45433
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Abstract

A set of three Embedded Atom Method potentials are presented that produce a stable L1 0structure. All three were nominally fitted to experimental parameters of the γ-TiAl phase; variations in the fit were allowed in order to give potentials with differing values of planar fault energies. These potentials were evaluated and found to produce stable APB(111), APB(100), CSF(111), and SISF(111) faults. Dislocation core structures were computed for 1/2<110>-type dislocations in both edge and screw orientation with all three potentials. The screw orientation of the highest fault energy potential was found to have a non-planar configuration, being spread about equally on two {111} close packed planes. All other cores were found to be planar and spread on a single {111} plane. No significant edge components of strain developed for the screw orientation, suggesting that these dislocations would not appear to be spread in Atomic Resolution TEM. Preliminary evaluations showed that dislocation mobilities were low, requiring stresses on the order of 10-3 μ for motion.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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Effect of Planar Fault Energies on Dislocation Core Structures and Mobilities in L10 Compounds
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